Invention Grant
- Patent Title: Implantable intracranial pressure sensor
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Application No.: US17150986Application Date: 2021-01-15
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Publication No.: US11701504B2Publication Date: 2023-07-18
- Inventor: Yu-Chong Tai , Aubrey M. Shapero , Shane S. Shahrestani , Azita Emami , Abhinav Agarwal , Kuang-Ming Shang , Sunghoon Kim , Olajire Idowu , Kurtis I. Auguste
- Applicant: California Institute of Technology , The Regents of the University of California
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology,The Regents of the University of California
- Current Assignee: California Institute of Technology,The Regents of the University of California
- Current Assignee Address: US CA Pasadena; US CA Oakland
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: A61M27/00
- IPC: A61M27/00

Abstract:
A long-lasting, wireless, biocompatible pressure sensor device is integrated within a hydrocephalus shunt, either within the shunt's reservoir/anchor or as an inline or pigtailed connector. When integrated within a typical reservoir, the device can sit within the reservoir's hollow frustum area covered by the resilient silicone dome of the reservoir. When integrated as an inline connector, the device can sit at any point on the peritoneal catheter or ventricular catheter, including between the VP shut's valve and reservoir. The pressure sensor device includes electronics that can be powered wirelessly by a reader held to a patient's scalp, and so no battery may be required. The reader can transmit an ambient, atmospheric pressure reading from outside the skull to the implanted device so that its electronics can calculate a calibrated gauge pressure internally and then relay it to a patient's smart phone.
Public/Granted literature
- US20210220627A1 Implantable Intracranial Pressure Sensor Public/Granted day:2021-07-22
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