Invention Grant
- Patent Title: Film deposition method and film deposition apparatus
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Application No.: US16285352Application Date: 2019-02-26
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Publication No.: US11702739B2Publication Date: 2023-07-18
- Inventor: Hiroki Miura , Masato Koakutsu
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP 18038039 2018.03.02
- Main IPC: C23C16/44
- IPC: C23C16/44 ; H01L21/687 ; C23C16/455 ; C23C16/52 ; H01L21/677
Abstract:
A film deposition method uses a film deposition apparatus including a source gas supply part and a cleaning gas supply part. In the method, a source gas is adsorbed on a substrate by supplying the source gas from the source gas supply part without supplying a purge gas into the cleaning gas supply part. A reaction product is deposited on the substrate by supplying a reaction gas reactable with the source gas to the substrate on which the source gas is adsorbed without supplying the purge gas into the cleaning gas supply part.
Public/Granted literature
- US20190271077A1 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS Public/Granted day:2019-09-05
Information query
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