Invention Grant
- Patent Title: N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer
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Application No.: US16605320Application Date: 2018-03-20
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Publication No.: US11702760B2Publication Date: 2023-07-18
- Inventor: Koichi Maegawa , Yasuhito Narushima , Yasufumi Kawakami , Fukuo Ogawa , Ayumi Kihara
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP 2017086530 2017.04.25 JP 2017086532 2017.04.25
- International Application: PCT/JP2018/011125 2018.03.20
- International Announcement: WO2018/198606A 2018.11.01
- Date entered country: 2019-10-15
- Main IPC: C30B15/04
- IPC: C30B15/04 ; C30B15/10 ; C30B29/06 ; C30B35/00 ; H01L21/02
Abstract:
In a producing method of an n-type monocrystalline silicon by pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon, the monocrystalline silicon exhibiting an electrical resistivity ranging from 0.5 mΩcm to 1.0 mΩcm is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.3-fold relative to a straight-body diameter of the monocrystalline silicon.
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