Invention Grant
- Patent Title: Highly stable semiconductor lasers and sensors for III-V and silicon photonic integrated circuits
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Application No.: US17407230Application Date: 2021-08-20
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Publication No.: US11703453B2Publication Date: 2023-07-18
- Inventor: Jerry R. Meyer , Igor Vurgaftman , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Charles D. Merritt , Michael V. Warren , R. Joseph Weiblen , Mijin Kim
- Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
- Applicant Address: US VA Arlington
- Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US VA Arlington
- Agency: US Naval Research Laboratory
- Agent Joslyn J Barritt
- The original application number of the division: US16509613 2019.07.12
- Main IPC: G01N21/59
- IPC: G01N21/59 ; H01S5/028 ; H01S5/10 ; H01S5/125 ; H01S5/34 ; H01S5/343 ; H01S5/042 ; H01S5/20 ; H01S5/02 ; H01S5/026 ; G02B6/10 ; G01N21/27 ; G01N21/25 ; G01J3/18 ; G01J3/28 ; H01S5/22 ; H01S5/06 ; H01S5/062

Abstract:
Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.
Public/Granted literature
- US20210396666A1 Highly Stable Semiconductor Lasers and Sensors for III-V and Silicon Photonic Integrated Circuits Public/Granted day:2021-12-23
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