Invention Grant
- Patent Title: Memory system and storage device
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Application No.: US17335512Application Date: 2021-06-01
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Publication No.: US11704235B2Publication Date: 2023-07-18
- Inventor: Shogo Ochiai , Nobuaki Tojo
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 21045256 2021.03.18
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G06F12/12 ; G06F12/08 ; G06F12/123 ; G06F12/0891

Abstract:
A memory system of an embodiment includes a nonvolatile memory, a primary cache memory, a secondary cache memory, and a processor. The processor performs address conversion by using logical-to-physical address conversion information relating to data to be addressed in the nonvolatile memory. Based on whether first processing is performed on the nonvolatile memory or second processing is performed on the nonvolatile memory, the processor controls to store whether the logical-to-physical address conversion information relating to the first processing to be in the primary cache memory as cache data or logical-to-physical address conversion information relating to the second processing to be in the secondary cache memory as cache data.
Public/Granted literature
- US20220300410A1 MEMORY SYSTEM AND STORAGE DEVICE Public/Granted day:2022-09-22
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