Invention Grant
- Patent Title: Methods for adjusting row hammer refresh rates and related memory devices and systems
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Application No.: US17651345Application Date: 2022-02-16
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Publication No.: US11705181B2Publication Date: 2023-07-18
- Inventor: Joo-Sang Lee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: G11C8/12
- IPC: G11C8/12 ; G11C11/406 ; G11C11/408 ; G11C11/4076
Abstract:
Methods of operating a memory device are disclosed. A method may include determining an amount of activity associated with at least one memory bank of a memory device. The method may further include adjusting a row hammer refresh rate for the at least one memory bank based on the amount of activity associated with the at least one memory bank. Memory devices and systems are also described.
Public/Granted literature
- US20220172773A1 METHODS FOR ADJUSTING ROW HAMMER REFRESH RATES AND RELATED MEMORY DEVICES AND SYSTEMS Public/Granted day:2022-06-02
Information query
