Invention Grant
- Patent Title: Substrate processing method
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Application No.: US17112111Application Date: 2020-12-04
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Publication No.: US11705309B2Publication Date: 2023-07-18
- Inventor: Yasutaka Hama , Ryo Matsubara , Nobuaki Shindo
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JP 19220924 2019.12.06
- Main IPC: C23C16/04
- IPC: C23C16/04 ; H01J37/32 ; C23C16/46

Abstract:
A temperature changing method includes changing a pressure of a gas supplied from a gas supply to a gap between the substrate and an electrostatic chuck from a first pressure to a second pressure being lower than the first pressure, changing a voltage applied to the electrostatic chuck from a first voltage to a second voltage being lower than the first voltage, changing a temperature of the electrostatic chuck from a first temperature to a second temperature, electrostatically attracting the substrate by the electrostatic chuck for a time in a state where the gas pressure is the second pressure and the voltage is the second voltage, changing the gas pressure from the second pressure to a third pressure being lower than the first pressure and higher than the second pressure, and changing the voltage from the second voltage to a third voltage being higher than the second voltage.
Public/Granted literature
- US20210175049A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2021-06-10
Information query
IPC分类: