A semiconductor device includes conductive structures formed in a first dielectric layer, a conductive cap layer selectively positioned over the conductive structures and the first dielectric layer with a top surface and sidewalls, a second dielectric layer selectively positioned over the first dielectric layer and disposed between the sidewalls of the conductive cap layer, a third dielectric layer selectively positioned over the second dielectric layer and disposed between the sidewalls of the conductive cap layer, a fourth dielectric layer arranged over the conductive structures and the third dielectric layer, and an interconnect structure formed in the fourth dielectric layer. The interconnect structure includes a trench structure and a via structure that is positioned below the trench structure and connected to the trench structure. The via structure includes a first portion positioned over the conductive cap layer and a second portion disposed over the first portion and the third dielectric layer.