Invention Grant
- Patent Title: Semiconductor device extension insulation
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Application No.: US17363691Application Date: 2021-06-30
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Publication No.: US11705393B2Publication Date: 2023-07-18
- Inventor: Hung-Chih Yu , Chien-Mao Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- The original application number of the division: US15664990 2017.07.31
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/48 ; H01L23/528 ; H01L21/768 ; H01L23/532 ; H01L29/78
Abstract:
A semiconductor device includes: a plurality of vertical conductive structures, wherein each of the plurality of vertical conductive structures extends through an isolation layer; and an insulated extension disposed horizontally between a first one and a second one of the plurality of vertical conductive structures.
Public/Granted literature
- US20210327808A1 SEMICONDUCTOR DEVICE EXTENSION INSULATION Public/Granted day:2021-10-21
Information query
IPC分类:
