Invention Grant
- Patent Title: Terminal configuration and semiconductor device
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Application No.: US17851313Application Date: 2022-06-28
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Publication No.: US11705399B2Publication Date: 2023-07-18
- Inventor: Hideaki Yanagida , Yoshihisa Takada
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP 19174862 2019.09.26 JP 19198563 2019.10.31
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/532 ; H01L23/00

Abstract:
There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.
Public/Granted literature
- US20220328407A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-10-13
Information query
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