Transistors having reduced parasitics and enhanced performance. In some embodiments, a transistor can include a source and a drain each implemented as a first type active region, and a gate implemented relative to the source and the drain such that application of a voltage to the gate results in formation of a conductive channel between the source and the drain. The transistor can further include a body configured to provide the conductive channel upon the application of the voltage to the gate. The body can be implemented as a second type active region that butts with the first type active region on the source side at a respective area not covered by the gate, and does not butt with the first type active region on the drain side at a respective area not covered by the gate.