Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US17480300Application Date: 2021-09-21
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Publication No.: US11706916B2Publication Date: 2023-07-18
- Inventor: Koichiro Yamaguchi
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP 17144465 2017.07.26
- Main IPC: G11C16/26
- IPC: G11C16/26 ; H10B41/41 ; G11C16/34 ; G11C16/04 ; G11C16/06 ; H10B41/35 ; H10B43/35

Abstract:
A method of controlling a memory device includes receiving a write instruction; starting a write operation to a first address in response to the write instruction; receiving a first read instruction of the first address; suspending the write operation; and applying a read voltage to a word line corresponding to the first address in a first read operation in response to the first read instruction.
Public/Granted literature
- US20220005816A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2022-01-06
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