Invention Grant
- Patent Title: Method of manufacturing a semiconductor memory device
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Application No.: US17338083Application Date: 2021-06-03
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Publication No.: US11706926B2Publication Date: 2023-07-18
- Inventor: Jae Taek Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR 20190034681 2019.03.26
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H10B43/40 ; H01L49/02 ; H01L29/08 ; H10B43/10 ; H10B43/27

Abstract:
A semiconductor memory device, with which a manufacturing method is associated, includes a substrate. The semiconductor memory device also includes a source structure disposed on a first region of the substrate, memory cell strings connected to the source structure, and a capacitor structure disposed on a second region of the substrate. The capacitor structure is spaced apart from the source structure in a horizontal direction.
Public/Granted literature
- US20210296344A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-09-23
Information query
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