Invention Grant
- Patent Title: Mitigating read disturb effects in memory devices
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Application No.: US17831109Application Date: 2022-06-02
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Publication No.: US11709732B2Publication Date: 2023-07-25
- Inventor: Gerald L. Cadloni , Mark Ish , James P. Crowley
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G06F11/07 ; G06F12/02 ; G06F12/0882 ; G06F12/1081 ; G06F11/30
Abstract:
A die read counter and a block read counter are maintained for a specified block of a memory device. An estimated number of read events associated with the specified block is determined based on a value of the block read counter and a value of the die read counter. Responsive to determining that the estimated number of read events satisfies a criterion, a media management operation of one or more pages associated with the specified block is performed.
Public/Granted literature
- US20220291995A1 MITIGATING READ DISTURB EFFECTS IN MEMORY DEVICES Public/Granted day:2022-09-15
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