Invention Grant
- Patent Title: Vertical power grid standard cell architecture
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Application No.: US16808336Application Date: 2020-03-03
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Publication No.: US11710733B2Publication Date: 2023-07-25
- Inventor: Hyeokjin Lim , Bharani Chava , Foua Vang , Seung Hyuk Kang , Venugopal Boynapalli
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H03K19/0185 ; H01L23/528

Abstract:
A MOS IC logic cell includes a plurality of gate interconnects extending on tracks in a first direction. The logic cell includes intra-cell routing interconnects coupled to at least a subset of the gate interconnects. The intra-cell routing interconnects include intra-cell Mx layer interconnects on an Mx layer extending in the first direction. The Mx layer is a lowest metal layer for PG extending in the first direction. The intra-cell Mx layer interconnects extend in the first direction over at least a subset of the tracks excluding every mth track, where 2≤m m*P.
Public/Granted literature
- US20210280571A1 VERTICAL POWER GRID STANDARD CELL ARCHITECTURE Public/Granted day:2021-09-09
Information query
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