Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17490009Application Date: 2021-09-30
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Publication No.: US11710751B2Publication Date: 2023-07-25
- Inventor: Yoshiyuki Kurokawa , Takayuki Ikeda , Hikaru Tamura , Munehiro Kozuma , Masataka Ikeda , Takeshi Aoki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP 10050486 2010.03.08
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L29/786 ; H01L31/105 ; H04N25/63 ; H04N25/75 ; H04N25/76

Abstract:
In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.
Public/Granted literature
- US20220020793A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-01-20
Information query
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