Invention Grant
- Patent Title: Sensing device
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Application No.: US16991697Application Date: 2020-08-12
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Publication No.: US11710802B2Publication Date: 2023-07-25
- Inventor: Hung-Jui Chen , Po-Jui Lin
- Applicant: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD. , LITE-ON TECHNOLOGY CORPORATION
- Applicant Address: CN Changzhou
- Assignee: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD.,LITE-ON TECHNOLOGY CORPORATION
- Current Assignee: LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD.,LITE-ON TECHNOLOGY CORPORATION
- Current Assignee Address: CN Changzhou; TW Taipei
- Agency: Li & Cai Intellectual Property (USA) Office
- Priority: CN 2010701758.3 2020.07.20
- Main IPC: H01L31/12
- IPC: H01L31/12 ; H01L33/62 ; H01L31/02 ; H01L31/0216 ; H01L31/0203 ; H01L33/52 ; H01L25/16 ; H01L31/173 ; A61B5/024

Abstract:
A sensing device includes a substrate, two chips, and a shielding structure. The two chips are respectively defined as an emitting chip and a receiving chip. The emitting chip can emit a sensing light beam, the receiving chip can receive the sensing light beam, and the two chips are fixed in position on the substrate at intervals. At least one of the chips is electrically connected to the substrate through at least one wire, and a position where the wire is connected to the substrate is located between the two chips. The shielding structure is formed on the substrate. The shielding structure is located between the two chips, and the shielding structure covers the wire and a portion of the chip connected to the wire. Compared with the conventional photo-plethysmography sensor, the sensing device has the advantage of a smaller size.
Public/Granted literature
- US20210050471A1 SENSING DEVICE Public/Granted day:2021-02-18
Information query
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