Invention Grant
- Patent Title: Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices
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Application No.: US16986411Application Date: 2020-08-06
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Publication No.: US11712749B2Publication Date: 2023-08-01
- Inventor: Ralf Rieske , Alexander Binter , Wolfgang Diewald , Bernhard Goller , Heimo Graf , Gerald Lackner , Jan Richter , Roland Rupp , Guenter Schagerl , Marko Swoboda
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE 2019122614.7 2019.08.22
- Main IPC: B23K26/0622
- IPC: B23K26/0622 ; H01L21/02 ; B23K26/00 ; H01L21/78
Abstract:
Provided is a parent substrate that includes a central region and an edge region. The edge region surrounds the central region. A detachment layer is formed in the central region. The detachment layer extends parallel to a main surface of the parent substrate. The detachment layer includes modified substrate material. A groove is formed in the edge region. The groove laterally encloses the central region. The groove runs vertically and/or tilted to the detachment layer.
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