Invention Grant
- Patent Title: Method for forming nickel plated graphene hollow sphere
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Application No.: US17147947Application Date: 2021-01-13
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Publication No.: US11713510B2Publication Date: 2023-08-01
- Inventor: Hongmei Zhang , Yuxin Ge , Hongnian Cai , Xingwang Cheng , Ying Liu , Qunbo Fan
- Applicant: Beijing Institute of Technology
- Applicant Address: CN Beijing
- Assignee: Beijing Institute of Technology
- Current Assignee: Beijing Institute of Technology
- Current Assignee Address: CN Beijing
- Agency: Myers Wolin, LLC
- Priority: CN 2010061309.7 2020.01.19
- Main IPC: C23C18/34
- IPC: C23C18/34 ; C23C18/36 ; C23C18/16

Abstract:
A method for forming a nickel plated graphene hollow sphere is based on self assembly of graphene under the actions of a rotation force and the van der Waals force, and an electroless nickel plating process performed on the exposed surface of the graphene by means of a hydrothermal method. The method is simple to implement at low cost, and the nickel plated graphene hollow sphere product can be produced with good reproducibility and a high yield. The nickel plated graphene hollow sphere formed by the present method can exhibit good electromagnetic wave absorbing performances of both nickel and graphene, and may have a lower overall density.
Public/Granted literature
- US20210222302A1 Method for forming nickel plated graphene hollow sphere Public/Granted day:2021-07-22
Information query
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