Invention Grant
- Patent Title: Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal
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Application No.: US17340416Application Date: 2021-06-07
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Publication No.: US11713516B2Publication Date: 2023-08-01
- Inventor: Yusuke Mori , Masashi Yoshimura , Masayuki Imanishi , Akira Kitamoto , Tomoaki Sumi , Junichi Takino , Yoshio Okayama
- Applicant: Panasonic Corporation
- Applicant Address: JP Osaka
- Assignee: PANASONIC HOLDINGS CORPORATION
- Current Assignee: PANASONIC HOLDINGS CORPORATION
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP 20102593 2020.06.12
- Main IPC: C30B29/38
- IPC: C30B29/38 ; C30B29/40 ; C30B25/02 ; H01L21/02 ; C01B21/06
Abstract:
A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020 cm−3 or more, and the concentration of the hydrogen element is 1×1019 cm−3 or more.
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