Invention Grant
- Patent Title: Semiconductor device and method of testing the same
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Application No.: US17338868Application Date: 2021-06-04
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Publication No.: US11714122B2Publication Date: 2023-08-01
- Inventor: Joon Woo Cho , Yun Ju Kwon , Sang Woo Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20170014217 2017.02.01
- Main IPC: G06F1/32
- IPC: G06F1/32 ; G01R31/28 ; G06F1/3206 ; G06F1/3209 ; G06F1/3296 ; G06F1/26
Abstract:
A semiconductor device and a method of testing the same are provided. A semiconductor device includes a Design Under Test (DUT), a processing core configured to execute test software to determine an optimum operating voltage of the DUT, and a protection circuit configured to block the transmission of undefined signals generated by the DUT while the processing core executes the test software.
Public/Granted literature
- US20210293876A1 SEMICONDUCTOR DEVICE AND METHOD OF TESTING THE SAME Public/Granted day:2021-09-23
Information query
