Infrared band pass filter having layers with refraction index greater than 3.5
Abstract:
The present disclosure relates to an infrared band pass filter, which comprises a first multilayer film. The first multilayer film including a plurality of Si:NH layers and a low refraction index layer. The plurality of low refraction index layers are stacked with Si:NH layers alternatively; wherein the difference between the refraction index of Si:NH layer and the refraction index of the low refraction index layer is greater than 0.5. The infrared band pass filter has a pass band in a wavelength range of 800 nm and 1100 nm, and when the incident angle is changed from 0 degrees to 30 degrees, the center wavelength of the pass band is shifted less than 12 nm, and the infrared band pass filter of the present disclosure can be used to enhance the 3D image resolution when applied to a 3D imaging system.
Public/Granted literature
Information query
Patent Agency Ranking
0/0