A semiconductor device capable of changing drive capability as appropriate is provided. A semiconductor device (100A) includes first to third circuits (102, 103, 101) and a first holding circuit (SH2), and the first holding circuit (SH2) includes a first holding portion (node ND2) and holds a first potential. The first circuit (102) has a function of changing the first potential of the first holding portion (node ND2) to a second potential, and the second circuit (103) has a function of generating a bias current based on the first potential or the second potential of the first holding portion (node ND2). The third circuit (101) includes first to third terminals (TLa4, TLa1, TLa2) and has a function of generating a third potential in accordance with an input potential to the second terminal (TLa1) by supply of the bias current to the first terminal (TLa4) and outputting the third potential from the third terminal (TLa2). Thus, the amount of the bias current generated in the second circuit (103) is increased or decreased by the first circuit (102).