Invention Grant
- Patent Title: Journal scheme for two-pass programming memory devices
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Application No.: US17179256Application Date: 2021-02-18
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Publication No.: US11714562B2Publication Date: 2023-08-01
- Inventor: Johnny A. Lam , Sanjay Subbarao , Samyukta Mudugal
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Lowenstein Sandler LLP
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory system identifies, in a logical to physical (L2P) journal associated with a memory device, a first journal entry reflecting a two pass programming operation, where the two pass programming operation includes a first pass to program data to a second memory location identified by a second physical address and a second pass to program a same data to a same second memory location identified by a same second physical address. The system determines whether the second pass of the two pass programming operation is complete. Responsive to determining that the second pass of the two pass programming operation is complete, the system causes a second journal entry of the L2P journal to reference from a first physical address to the second physical address. The system reconstructs the L2P table based on the second journal entry.
Public/Granted literature
- US20220187999A1 JOURNAL SCHEME FOR TWO-PASS PROGRAMMING MEMORY DEVICES Public/Granted day:2022-06-16
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