Invention Grant
- Patent Title: Computing-in-memory device and method
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Application No.: US17130918Application Date: 2020-12-22
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Publication No.: US11714570B2Publication Date: 2023-08-01
- Inventor: Jonathan Tsung-Yung Chang , Hidehiro Fujiwara , Hung-Jen Liao , Yen-Huei Chen , Yih Wang , Haruki Mori
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Merchant & Gould P.C.
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G11C11/419 ; G11C7/10 ; G11C8/16 ; G06N3/063

Abstract:
A charge sharing scheme is used to mitigate the variations in cell currents in order to achieve higher accuracy for CIM computing. In some embodiments, a capacitor is associated with each SRAM cell, and the capacitors associated with all SRAM cells in a column are included in averaging the RBL current. In some embodiments, a memory unit associated to an RBL in a CIM device includes a storage element adapted to store a weight, a first switch device connected to the storage element and adapted to be controlled by an input signal and generate a product signal having a magnitude indicative of the product of the input signal and the stored weight. The memory unit further includes a capacitor adapted to receive the product signal and store an amount of charge corresponding to the magnitude of the product signal. The memory unit further include a second switch device adapted to transfer the charge on the capacitor to the RBL.
Public/Granted literature
- US20210263672A1 COMPUTING-IN-MEMORY DEVICE AND METHOD Public/Granted day:2021-08-26
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