Invention Grant
- Patent Title: Memory address protection circuit and method of operating same
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Application No.: US17855412Application Date: 2022-06-30
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Publication No.: US11714705B2Publication Date: 2023-08-01
- Inventor: Saman M. I. Adham , Ramin Shariat-Yazdi , Shih-Lien Linus Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F12/10 ; G06F11/00 ; G06F12/14

Abstract:
A memory circuit includes: a memory configured to store a data unit and parity bits, the parity bits including data parity bits based on the data unit and write address parity bits based on a write address associated with the stored data unit; a write address port configured to receive the write address for the stored data unit; a first decoding circuit configured to determine when a data error exists based on the stored data unit and the data parity bits; a second decoding circuit configured to generate a decoded write address from a read address and the write address parity bits; and an error detecting circuit configured to determine when an address error exists based on a comparison of the decoded write address to the read address.
Public/Granted literature
- US20220334916A1 MEMORY ADDRESS PROTECTION CIRCUIT AND METHOD OF OPERATING SAME Public/Granted day:2022-10-20
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