Invention Grant
- Patent Title: Standard cell and semiconductor device including anchor nodes and method of making
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Application No.: US17395193Application Date: 2021-08-05
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Publication No.: US11714946B2Publication Date: 2023-08-01
- Inventor: Nien-Yu Tsai , Chin-Chang Hsu , Wen-Ju Yang , Hsien-Hsin Sean Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- The original application number of the division: US16902846 2020.06.16
- Main IPC: G06F30/30
- IPC: G06F30/30 ; H01L27/02 ; G06F30/392 ; G06F30/398 ; G06F119/18 ; G06F30/39

Abstract:
A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.
Public/Granted literature
- US20210365623A1 STANDARD CELL AND SEMICONDUCTOR DEVICE INCLUDING ANCHOR NODES AND METHOD OF MAKING Public/Granted day:2021-11-25
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