Invention Grant
- Patent Title: Leakage analysis on semiconductor device
-
Application No.: US17314988Application Date: 2021-05-07
-
Publication No.: US11714949B2Publication Date: 2023-08-01
- Inventor: Cheng-Hua Liu , Yun-Xiang Lin , Yuan-Te Hou , Chung-Hsing Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G06F30/00
- IPC: G06F30/00 ; G06F30/398 ; G06F30/367 ; G06F30/20 ; G06F30/39 ; G06F119/10 ; G06F30/392 ; G06F119/18 ; G06F111/20

Abstract:
A method includes: identifying attributes that are associated with cell edges of abutted cells in a layout of a semiconductor device, wherein the attributes include at least one of terminal types of the cell edges; determining at least one minimal boundary leakage of the abutted cells based on the attributes, for adjustment of the layout of the semiconductor device. A system is also disclosed herein.
Public/Granted literature
- US20210264092A1 LEAKAGE ANALYSIS ON SEMICONDUCTOR DEVICE Public/Granted day:2021-08-26
Information query