Invention Grant
- Patent Title: Signal generation circuit and memory
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Application No.: US17504583Application Date: 2021-10-19
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Publication No.: US11715503B2Publication Date: 2023-08-01
- Inventor: Liping Chang , Bin Hu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2110328196.7 2021.03.26
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22

Abstract:
Provided are a signal generation circuit and a memory. The signal generation circuit includes: a clock delay circuit for delaying an initial pulse signal to output an intermediate signal delayed by a first delay duration, the first delay duration being equal to one or more clock cycles; a physical delay circuit for delaying the intermediate signal to output a target signal, if an actual delay duration of the physical delay circuit is equal to a second delay duration, the target signal being delayed by a target duration, a difference between the actual and second delay durations fluctuating within a first preset range, and the shorter the second delay duration, the narrower the first preset range; and a generation circuit for outputting a function pulse signal having a pulse width equal to a time interval between rising edges of the initial pulse signal and the target signal.
Public/Granted literature
- US20220310143A1 SIGNAL GENERATION CIRCUIT AND MEMORY Public/Granted day:2022-09-29
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