Invention Grant
- Patent Title: Memory device for supporting command bus training mode and method of operating the same
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Application No.: US17518888Application Date: 2021-11-04
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Publication No.: US11715504B2Publication Date: 2023-08-01
- Inventor: Young-hun Kim , Si-hong Kim , Tae-young Oh , Kyung-soo Ha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR 20170155812 2017.11.21 KR 20180111604 2018.09.18
- Main IPC: G11C7/22
- IPC: G11C7/22 ; G11C8/18 ; G11C29/50 ; G11C7/10 ; G11C8/10 ; G11C29/02

Abstract:
There are provided a memory device for supporting a command bus training (CBT) mode and a method of operating the same. The memory device is configured to enter a CBT mode or exit from the CBT mode in response to a logic level of a first data signal, which is not included in second data signals, which are in one-to-one correspondence with command/address signals, which are used to output a CBT pattern in the CBT mode. The memory device is further configured to change a reference voltage value in accordance with a second reference voltage setting code received by terminals associated with the second data signals, to terminate the command/address signals or a pair of data clock signals to a resistance value corresponding to an on-die termination (ODT) code setting stored in a mode register, and to turn off ODT of data signals in the CBT mode.
Public/Granted literature
- US20220059148A1 MEMORY DEVICE FOR SUPPORTING COMMAND BUS TRAINING MODE AND METHOD OF OPERATING THE SAME Public/Granted day:2022-02-24
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