Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17836213Application Date: 2022-06-09
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Publication No.: US11715509B2Publication Date: 2023-08-01
- Inventor: Shunpei Yamazaki , Hajime Kimura , Atsushi Miyaguchi , Yoshiaki Oikawa
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP 18114810 2018.06.15 JP 18114813 2018.06.15
- Main IPC: G06N3/04
- IPC: G06N3/04 ; G06N3/063 ; G06N3/08 ; G11C11/405 ; H01L29/786 ; H10B12/00

Abstract:
A semiconductor device that enables lower power consumption and data storage imitating a human brain is provided. The semiconductor device includes a control unit, a memory unit, and a sensor unit. The memory unit includes a memory circuit and a switching circuit. The memory circuit includes a first transistor and a capacitor. The switching circuit includes a second transistor and a third transistor. The first transistor and the second transistor include a semiconductor layer including a channel formation region with an oxide semiconductor, and a back gate electrode. The control unit has a function of switching a signal supplied to the back gate electrode, in accordance with a signal obtained at the sensor unit.
Public/Granted literature
- US20220301614A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-09-22
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