Invention Grant
- Patent Title: Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching
-
Application No.: US17525516Application Date: 2021-11-12
-
Publication No.: US11715635B2Publication Date: 2023-08-01
- Inventor: Morteza Monavarian , Daniel Feezell , Andrew Aragon , Saadat Mishkat-Ul-Masabih , Andrew Allerman , Andrew Armstrong , Mary Crawford
- Applicant: UNM RAINFOREST INNOVATIONS
- Applicant Address: US NM Albuquerque
- Assignee: UNM RAINFOREST INNOVATIONS
- Current Assignee: UNM RAINFOREST INNOVATIONS
- Current Assignee Address: US NM Albuquerque
- Agency: MH2 Technology Law Group LLP
- The original application number of the division: US16684313 2019.11.14
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/306 ; H01L21/02
Abstract:
A method comprises providing a substrate comprising an n-type Al/In/GaN semiconductor material. A surface of the substrate is dry-etched to form a trench therein and cause dry-etch damage to remain on the surface. The surface of the substrate is immersed in an electrolyte solution and illuminated with above bandgap light having a wavelength that generates electron-hole pairs in the n-type Al/In/GaN semiconductor material, thereby photoelectrochemically etching the surface to remove at least a portion of the dry-etch damage.
Public/Granted literature
- US20220068632A1 REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS BY PHOTOELECTROCHEMICAL ETCHING Public/Granted day:2022-03-03
Information query
IPC分类:
