Invention Grant
- Patent Title: Method and device for etching silicon oxide
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Application No.: US17272742Application Date: 2019-09-02
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Publication No.: US11715641B2Publication Date: 2023-08-01
- Inventor: Shoi Suzuki , Akifumi Yao
- Applicant: CENTRAL GLASS COMPANY, LIMITED
- Applicant Address: JP Yamaguchi
- Assignee: CENTRAL GLASS COMPANY, LIMITED
- Current Assignee: CENTRAL GLASS COMPANY, LIMITED
- Current Assignee Address: JP Yamaguchi
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP 18171060 2018.09.13 JP 19122643 2019.07.01
- International Application: PCT/JP2019/034427 2019.09.02
- International Announcement: WO2020/054476A 2020.03.19
- Date entered country: 2021-03-02
- Main IPC: H01L21/311
- IPC: H01L21/311 ; C09K13/08 ; H01L21/67 ; H01L21/302 ; H01L21/02
Abstract:
The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.
Public/Granted literature
- US20210375634A1 METHOD AND DEVICE FOR ETCHING SILICON OXIDE Public/Granted day:2021-12-02
Information query
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