- Patent Title: Substrate processing apparatus and manufacturing method therefor
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Application No.: US16984386Application Date: 2020-08-04
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Publication No.: US11715650B2Publication Date: 2023-08-01
- Inventor: Yusuke Hashimoto , Jiro Higashijima
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP 19147949 2019.08.09
- Main IPC: H01L21/67
- IPC: H01L21/67

Abstract:
A substrate processing apparatus includes a nozzle unit. The nozzle unit includes a line and a nozzle tip provided on a tip end of the line. The line includes a first layer, a second layer and a third layer. The nozzle tip is formed of a corrosion resistant resin having conductivity. The third layer is configured to cover the first layer and the second layer from outside and cover a part of the nozzle tip from outside.
Public/Granted literature
- US20210043467A1 SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD THEREFOR Public/Granted day:2021-02-11
Information query
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