Semiconductor device having well contact diffusion region supplying well potential
Abstract:
Disclosed herein is an apparatus that includes: a first diffusion region extending in a first direction; second diffusion regions arranged in the first direction; a first metallic line overlapping with the first diffusion region; second metallic lines each overlapping with an associated one of the second diffusion regions; a third metallic line overlapping with the first and second metallic lines; first contact plugs connecting the first metallic line to the first diffusion region; second contact plugs each electrically connecting an associated one of the second metallic lines to an associated one of the second diffusion regions; and third contact plugs each electrically connecting the third metallic line to an associated one of the second metallic lines.
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