Invention Grant
- Patent Title: Semiconductor device having well contact diffusion region supplying well potential
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Application No.: US17105102Application Date: 2020-11-25
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Publication No.: US11715732B2Publication Date: 2023-08-01
- Inventor: Moe Ishimatsu , Kiyotaka Endo , Takanari Shimizu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/092 ; H01L23/528

Abstract:
Disclosed herein is an apparatus that includes: a first diffusion region extending in a first direction; second diffusion regions arranged in the first direction; a first metallic line overlapping with the first diffusion region; second metallic lines each overlapping with an associated one of the second diffusion regions; a third metallic line overlapping with the first and second metallic lines; first contact plugs connecting the first metallic line to the first diffusion region; second contact plugs each electrically connecting an associated one of the second metallic lines to an associated one of the second diffusion regions; and third contact plugs each electrically connecting the third metallic line to an associated one of the second metallic lines.
Public/Granted literature
- US20220165724A1 SEMICONDUCTOR DEVICE HAVING WELL CONTACT DIFFUSION REGION SUPPLYING WELL POTENTIAL Public/Granted day:2022-05-26
Information query
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