Semiconductor device with a single diffusion break structure having a sidewall aligned with a gate sidewall
Abstract:
A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB trench extending along a second direction to divide the fin-shaped structure into a first portion, a second portion, and a third portion, and then performing a fin-cut process to remove the first portion and the third portion.
Public/Granted literature
Information query
Patent Agency Ranking
0/0