A silicon carbide semiconductor device includes a metal plate having a first main surface and a second main surface, the second main surface being opposite to the first main surface, an insulating film provided on a portion of the first main surface of the metal plate, a first conductive layer provided on the insulating film, and a silicon carbide semiconductor chip. The silicon carbide semiconductor chip includes a first electrode and a second electrode on a first surface and a third electrode on a second surface, the second surface being opposite to the first surface. The first surface of the silicon carbide semiconductor chip faces the first main surface of the metal plate, the first electrode is bonded to the first conductive layer with a first bonding material, and the second electrode is bonded to the first main surface of the metal plate with a second bonding material.