Invention Grant
- Patent Title: Semiconductor devices with improved capacitors
-
Application No.: US16802396Application Date: 2020-02-26
-
Publication No.: US11715781B2Publication Date: 2023-08-01
- Inventor: Wang-Chun Huang , Ching-Wei Tsai , Kuan-Lun Cheng , Chih-Hao Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/423 ; H01L29/786 ; H01L29/66 ; H01L27/088 ; H01L29/78 ; H01L21/8234
Abstract:
A semiconductor device includes a substrate, two source/drain (S/D) regions over the substrate, a channel region between the two S/D regions and including a semiconductor material, a deposited capacitor material (DCM) layer over the channel region a dielectric layer over the DCM layer and a metallic gate electrode layer over the dielectric layer.
Public/Granted literature
- US20210265481A1 Semiconductor Devices with Improved Capacitors Public/Granted day:2021-08-26
Information query
IPC分类:
