Invention Grant
- Patent Title: Ferroelectric transistors and assemblies comprising ferroelectric transistors
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Application No.: US16983841Application Date: 2020-08-03
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Publication No.: US11715797B2Publication Date: 2023-08-01
- Inventor: Kamal M. Karda , Haitao Liu , Durai Vishak Nirmal Ramaswamy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/51 ; H01L29/66
Abstract:
Some embodiments include a ferroelectric transistor having a first electrode and a second electrode. The second electrode is offset from the first electrode by an active region. A transistor gate is along a portion of the active region. The active region includes a first source/drain region adjacent the first electrode, a second source/drain region adjacent the second electrode, and a body region between the first and second source/drain regions. The body region includes a gated channel region adjacent the transistor gate. The active region includes at least one barrier between the second electrode and the gated channel region which is permeable to electrons but not to holes. Ferroelectric material is between the transistor gate and the gated channel region.
Public/Granted literature
- US20210066502A1 Ferroelectric Transistors and Assemblies Comprising Ferroelectric Transistors Public/Granted day:2021-03-04
Information query
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