Invention Grant
- Patent Title: Schottky rectifier with surge-current ruggedness
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Application No.: US17450734Application Date: 2021-10-13
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Publication No.: US11715804B2Publication Date: 2023-08-01
- Inventor: Andrei Konstantinov
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Scottsdale
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/16 ; H01L29/06 ; H01L29/66 ; H01L21/04 ; H01L29/36 ; H01L29/04 ; H01L21/761

Abstract:
A SiC Schottky rectifier with surge current ruggedness is described. The Schottky rectifier includes one or more multi-layer bodies that provide multiple types of surge current protection.
Public/Granted literature
- US20220029033A1 SCHOTTKY RECTIFIER WITH SURGE-CURRENT RUGGEDNESS Public/Granted day:2022-01-27
Information query
IPC分类: