Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.