Invention Grant
- Patent Title: Matching circuits for phase change material switches
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Application No.: US17483461Application Date: 2021-09-23
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Publication No.: US11716067B2Publication Date: 2023-08-01
- Inventor: Jean-Luc Erb
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus & McFarland LLP
- Agent John Land, Esq.
- Main IPC: H03H7/38
- IPC: H03H7/38

Abstract:
Circuits and methods that provide wider bandwidth and smaller IM inductances for phase change material (PCM) based RF switch networks. The present invention recognizes that it is beneficial to consider the total high parasitic capacitance to ground of the various PCM switches in an RF switch network as constituting two or more separate capacitive contributions. This leads to several “split capacitance” concepts, including signal-path splitting, switch-block splitting, stacked-switch splitting, and splitting parasitic capacitances due to layout discontinuities, in which compensating impedance matching inductances are inserted between additive capacitances.
Public/Granted literature
- US20230090893A1 Matching Circuits for Phase Change Material Switches Public/Granted day:2023-03-23
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