Invention Grant
- Patent Title: Semiconductor device and method for forming the wiring structures avoiding short circuit thereof
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Application No.: US17400002Application Date: 2021-08-11
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Publication No.: US11716838B2Publication Date: 2023-08-01
- Inventor: Yasuyuki Sakogawa
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H10B12/00
- IPC: H10B12/00 ; G11C5/06

Abstract:
A apparatus includes a memory cell region; a peripheral region adjacent to the memory cell region; first, second, third, fourth and fifth bit-lines arranged in numerical order and extending across the memory cell region and the peripheral region; and first, second and third bit-line contacts connecting with the first, third and fifth bit-lines in the peripheral region, respectively; wherein the first and second bit-line contacts are arranged adjacently without interposing the second bit-line therebetween; and wherein the second and third bit-line contacts are arranged adjacently with interposing the fourth bit-line therebetween.
Public/Granted literature
- US20230050713A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE WIRING STRUCTURES AVOIDING SHORT CIRCUIT THEREOF Public/Granted day:2023-02-16
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