Invention Grant
- Patent Title: Random bit circuit capable of compensating the process gradient
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Application No.: US17035773Application Date: 2020-09-29
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Publication No.: US11716842B2Publication Date: 2023-08-01
- Inventor: Shiau-Pin Lin , Chih-Min Wang
- Applicant: eMemory Technology Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H10B41/35
- IPC: H10B41/35 ; H01L29/788 ; G06F7/58 ; H03K3/84 ; H01L49/02

Abstract:
A random bit circuit includes four storage cells controlled by four different word lines. The first storage cell and the second storage cell are disposed along a first direction sequentially, and the first storage cell and the third storage cell are disposed along a second direction sequentially. The third storage cell and the fourth storage cell are disposed along the first direction sequentially. The first storage cell and the fourth storage cell are coupled in series, and the second storage cell and the third storage cell are coupled in series.
Public/Granted literature
- US20210149636A1 RANDOM BIT CIRCUIT CAPABLE OF COMPENSATING THE PROCESS GRADIENT Public/Granted day:2021-05-20
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