Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17817478Application Date: 2022-08-04
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Publication No.: US11716852B2Publication Date: 2023-08-01
- Inventor: Takeshi Kamigaichi
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H10B43/27
- IPC: H10B43/27 ; H10B43/10 ; H10B43/30 ; H10B43/35 ; H01L29/417 ; H01L29/423 ; H10B41/27

Abstract:
A semiconductor body device includes a stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending in a stacking direction of the stacked body through the electrode layers and having a pipe shape, a plurality of memory cells being provided at intersecting portions of the semiconductor body with the electrode layers, and a columnar insulating member extending in the stacking direction inside the semiconductor body having the pipe shape.
Public/Granted literature
- US20220375960A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-11-24
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