Invention Grant
- Patent Title: Preparation method of high purity SiC powder
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Application No.: US16692036Application Date: 2019-11-22
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Publication No.: US11718532B2Publication Date: 2023-08-08
- Inventor: Gyu Do Lee , Tae Hee Kim , Chae Young Lee
- Applicant: KCindustrial Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: KCindustrial Co., Ltd.
- Current Assignee: KCindustrial Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR 20180170220 2018.12.27 KR 20190109045 2019.09.03 KR 20190109046 2019.09.03
- Main IPC: C01B32/956
- IPC: C01B32/956 ; B02C23/10 ; B02C21/00
Abstract:
The process for preparing high purity SiC powders according to the embodiment not only solves the environmental problems by using waste SiC, but also reduces the manufacturing cost with high yield, high productivity, and high uniformity.
Public/Granted literature
- US20200207630A1 PREPARATION METHOD OF HIGH PURITY SIC POWDER Public/Granted day:2020-07-02
Information query
