Invention Grant
- Patent Title: Sputtering target and manufacturing method therefor
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Application No.: US16491151Application Date: 2018-03-16
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Publication No.: US11718907B2Publication Date: 2023-08-08
- Inventor: Tomio Otsuki , Yasushi Morii
- Applicant: JX Nippon Mining & Metals Corporation
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Marshall, Gerstein & Borun LLP
- Priority: JP 17068457 2017.03.30 JP 18040212 2018.03.06
- International Application: PCT/JP2018/010629 2018.03.16
- International Announcement: WO2018/180645A 2018.10.04
- Date entered country: 2019-09-04
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C22C9/01 ; C22C9/05 ; C22C9/06 ; C22F1/08

Abstract:
A sputtering target according to one embodiment is an integrated sputtering target comprising a target portion and a backing plate portion, both of them being made of copper and unavoidable impurities, wherein a Vickers hardness Hv is 90 or more, and wherein a flat ratio of crystal grains in a cross section orthogonal to a sputtering surface is 0.35 or more and 0.65 or less.
Public/Granted literature
- US20200032385A1 SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR Public/Granted day:2020-01-30
Information query
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