Invention Grant
- Patent Title: DC magnetron sputtering
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Application No.: US17241237Application Date: 2021-04-27
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Publication No.: US11718908B2Publication Date: 2023-08-08
- Inventor: Scott Haymore , Amit Rastogi , Rhonda Hyndman , Steve Burgess , Ian Moncrieff
- Applicant: SPTS TECHNOLOGIES LIMITED
- Applicant Address: GB Newport
- Assignee: SPTS TECHNOLOGIES LIMITED
- Current Assignee: SPTS TECHNOLOGIES LIMITED
- Current Assignee Address: GB Newport
- Agency: Hodgson Russ LLP
- Priority: GB 06115 2016.04.11
- The original application number of the division: US15478283 2017.04.04
- Main IPC: C23C14/50
- IPC: C23C14/50 ; C23C14/34 ; C23C14/35 ; C23C14/54 ; C23C14/06 ; H01J37/34 ; H01J37/32

Abstract:
A method of depositing a film on a substrate is provided. The method includes positioning the substrate on a substrate support in a chamber and depositing the film on the substrate using a DC magnetron sputtering process in which an electrical bias signal causes ions to bombard the substrate. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region, and the substrate is positioned on the central region so that a portion of the substrate overlays the edge region and is spaced apart therefrom.
Public/Granted literature
- US20210246545A1 DC Magnetron Sputtering Public/Granted day:2021-08-12
Information query
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