Invention Grant
- Patent Title: Method of testing memory device employing limited number of test pins and memory device utilizing same
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Application No.: US17399033Application Date: 2021-08-10
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Publication No.: US11719748B2Publication Date: 2023-08-08
- Inventor: Xiaodong Xu , Xiangming Zhao , Shunlin Liu , Yi Chen
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: Bayes PLLC
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R31/317 ; G01R31/3185 ; G11C7/22 ; G11C29/02

Abstract:
A memory device includes a plurality of pins, a controller die coupled to the isolation pin, and a memory die. The plurality of pins include an isolation pin, a test mode select pin configured to switch an operation mode of the memory die, a test clock pin configured to receive a test clock, and a test data pin configured to perform a data transmission. The controller die is coupled to the isolation pin. The memory die is coupled to the test mode select pin, the test clock pin, and the test data pin.
Public/Granted literature
- US20210364570A1 METHOD OF TESTING MEMORY DEVICE EMPLOYING LIMITED NUMBER OF TEST PINS AND MEMORY DEVICE UTILIZING SAME Public/Granted day:2021-11-25
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