Invention Grant
- Patent Title: Resist composition and patterning process
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Application No.: US16984535Application Date: 2020-08-04
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Publication No.: US11720020B2Publication Date: 2023-08-08
- Inventor: Jun Hatakeyama
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: WHDA, LLP
- Priority: JP 19160863 2019.09.04
- Main IPC: G03F7/038
- IPC: G03F7/038 ; G03F7/26 ; G03F7/00 ; G03F7/039

Abstract:
A resist composition comprising a base polymer and a salt is provided. The salt consisting of an anion derived from a carboxylic acid having an iodized or brominated hydrocarbyl group and a cation derived from a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene compound. The resist composition exerts a high sensitizing effect and an acid diffusion suppressing effect, causes no film thickness loss after development, and is improved in resolution, LWR and CDU when a pattern is formed therefrom by lithography.
Public/Granted literature
- US20210063879A1 RESIST COMPOSITION AND PATTERNING PROCESS Public/Granted day:2021-03-04
Information query
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